Zinc oxide and gallium doped zinc oxide nanowires for optoelectronics
نویسندگان
چکیده
Zinc oxide (ZnO) nanostructures are become an important matter of study since they can be used in nanoscale optoelectronics for applications such as memory storage, logic circuits, solid-state gas-, bioor light-sensors, solar cells, field effect transistors, field effect displays, and short wavelength light emitting diodes. ZnO is a semiconductor with a direct and wide band-gap around 3.4 eV, and therefore is suitable to sense UV light. The electronic properties of one-dimensional (1-D) ZnO structures have been studied in detail [1-4]. In comparison with the current technologies, those structures could improve the sensitivity of devices such as optical switches or gas sensors. Moreover, a few works reported in the literature showed that ZnO NWs are highly insulating with high resistivity values in dark [4]. Therefore, the assembly of ZnO NWs in optoelectronic and electronic devices and the optimization of their electrical properties are crucial challenges to foster technology progress.
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